공급망
Lifecycle StatusObsolete (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
관련 부품
STMicroelectronicsSTP6NK60ZFP
N-channel 600 V - 1 Ohm - 6 A - TO-220 Zener-Protected SuperMESH(TM) Power MOSFET
STMicroelectronicsSTP9NK60ZFP
N-Channel 600 V 950 mOhm Flange Mount SuperMESH Power Mosfet - TO-220FP
STMicroelectronicsSTP5NK60ZFP
N-CHANNEL 600V - 1.2 Ohm - 5A TO-220FP Zener-Protected SuperMESH™ Power MOSFET
설명
유통업체에서 제공한 onsemi FDPF7N60NZ에 대한 설명입니다.
N-Channel Power MOSFET, UniFETTM II, 600 V, 6.5 A, 1.25 Ω, TO-220F
Trans MOSFET N-CH 600V 6.5A 3-Pin(3+Tab) TO-220FP Rail
Power Field-Effect Transistor, 6.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)6.5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1.25 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance730 pF
Max Operating Temperature150 °C
Max Power Dissipation33 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation33 W
Rds On Max1.25 Ω
Resistance1.25 Ω
Rise Time70 ns
Turn-Off Delay Time40 ns
Turn-On Delay Time17.5 ns
Dimensions
Height16.07 mm
Length10.36 mm
Width4.9 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책