공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-02-21
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
STMicroelectronicsSTP15NK50ZFP
Mosfet Transistor, N Channel, 14 A, 500 V, 340 Mohm, 10 V, 3.75 V Rohs Compliant: Yes
STMicroelectronicsSTP14NK50ZFP
N-Channel 500 V 380 mOhm Flange Mount SuperMESH Power Mosfet - TO-220FP
설명
유통업체에서 제공한 onsemi FDPF15N65에 대한 설명입니다.
N-Channel Power MOSFET, UniFETTM, 650V, 15A, 440 mΩ, TO-220F
Power MOSFET, N Channel, 650 V, 15 A, 0.36 ohm, TO-220F, Through Hole
650 V N-CHANNEL MOSFET Power Field-Effect Transistor, 15A I(D), 650V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 650V, 15A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 15A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.36ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)15 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance440 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.095 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation73.5 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation38.5 W
Rds On Max440 mΩ
Rise Time125 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time105 ns
Turn-On Delay Time65 ns
Dimensions
Height19.5 mm
Length10.16 mm
Width4.7 mm