onsemi FDPF14N30

N-Channel Power MOSFET, UniFETTM, 300 V, 14 A, 290 mΩ, TO-220F
EOL

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onsemi FDPF14N30에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

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Fairchild Semiconductor

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공급망

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-02-16
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

관련 부품

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설명

유통업체에서 제공한 onsemi FDPF14N30에 대한 설명입니다.

N-Channel Power MOSFET, UniFETTM, 300 V, 14 A, 290 mΩ, TO-220F
N-Channel 300 V 0.29 Ohm Through Hole Mosfet - TO-220F
Power Field-Effect Transistor, 14A I(D), 300V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.29ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation
MOSFET, N, TO-220F; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:300V; Current, Id Cont:14A; Resistance, Rds On:0.29ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:56A; No. of Pins:3; Power Dissipation:35W; Voltage, Vds Max:300V; Voltage, Vgs th Max:5V
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

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