유통업체에서 제공한 onsemi FDP16N50에 대한 설명입니다.
200W(Tc) 5V@ 250¦ÌA 45nC@ 10V 1N 500V 380m¦¸@ 8A,10V 1.945pF@25V TO-220-3
Power Field-Effect Transistor, 16A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:16A; On Resistance, Rds(on):0.38ohm; Rds(on) Test Voltage, Vgs:5V; Threshold Voltage, Vgs Typ:30V ;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:16A; Resistance, Rds On:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Alternate Case Style:SOT-78B; Current, Idm Pulse:64A; Pin Configuration:G(1),D(2)S(3); Power, Pd:200W; Resistance, Rds on Max:0.38ohm; Resistance, Rds on Typ.:0.31ohm; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:0.63°C/W; Typ Capacitance Ciss:1495pF; Voltage, Rds Measurement:10V; Voltage, Vds Max:500V; Voltage, Vgs th Max:5V; Voltage, Vgs th Min:3V