onsemi FDMS8690

Power Field-Effect Transistor, 27A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
$ 0.999
Obsolete
제조업체 페이지데이터시트

가격 및 재고

모든 가격 할인 보기
DistributorSKUMinPkg
Rochester ElectronicsFDMS8690429,820
15h
Verical
3
FDMS8690437281
Component Stockers USAFDMS8690485,374
>1wk
Win SourceWS-FDMS869010,300165
16h
ICPartonlineFDMS869028,471
>1wk

데이터시트 및 문서

onsemi FDMS8690에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet7 페이지19년 전
Datasheet0 페이지0년 전

Farnell

Fairchild Semiconductor

iiiC

DigiKey

재고 내역

3개월간의 트렌드:
Restocked
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공급망

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-03-29
Lifecycle StatusObsolete (Last Updated: 5 months ago)

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설명

유통업체에서 제공한 onsemi FDMS8690에 대한 설명입니다.

Power Field-Effect Transistor, 27A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
MOSFET N-CH 30V 14A/27A 8MLP
Fmall Co., Limited
Field Effect Tube (MOSFET)
Weyland Electronics Group Pte. Ltd.
N-CHANNEL POWER MOSFET
Bettlink
MOSFETs LOW_VOLTAGE
Mouser
MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:14A; Resistance, Rds On:0.009ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.6V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:100A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS8690; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V
Farnell
This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide an extremely versatile device.
Fairchild Semiconductor

이미지

Rochester Electronics
iiiC

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