가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Flip Electronics | FDMS86568-F085 | 1,040 | 14h | |||||||||
| Avnet | FDMS86568-F085 | 0 | 496 | 1d | ||||||||
| Worldway Electronics | FDMS86568_F085 | 27,921 | 7 | Tape & Reel | 1h | |||||||
| Fmall Co., Limited | FDMS86568-F085 | 37,390 | >1wk | |||||||||
| Suntronic | FDMS86568-F085 | 2,825 | 4h |
공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-08
Lifecycle StatusObsolete (Last Updated: 9 hours ago)
LTB Date2020-01-24
LTD Date2020-07-24
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 9 hours ago)
관련 부품
Diodes Inc.DMT6004LPS-13
Power MOSFET, N Channel, 60 V, 100 A, 3.1 Milliohms, PowerDI5060, 8 Pins, Surface Mount
InfineonIRFH5006TRPBF
INFINEON IRFH5006TRPBF MOSFET Transistor, N Channel, 21 A, 60 V, 0.0035 ohm, 10 V, 4 VNew
InfineonIRFH7085TRPBF
60V Single N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package, PG-TDSON-8, RoHS
설명
유통업체에서 제공한 onsemi FDMS86568-F085에 대한 설명입니다.
Trans MOSFET N-CH 60V 80A 8-Pin PQFN T/R
214W(Tj) 20V 4V@ 250¦ÌA 71nC@ 10 V 1N 60V 3.5m¦¸@ 80A,10V 80A 4.335nF@30V 6mm*5mm*1.1mm
Power Field-Effect Transistor, 80A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
N-Channel PowerTrench® 60V, 80A, 3.5mΩ
Trans MOSFET N-CH 60V 80A Automotive T/R
Nmos Pwr56 60V 3.5 Mohm / Reel
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight172.8 mg
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance3.5 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.335 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation214 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation214 W
Rds On Max3.5 mΩ
Schedule B8541290080
Turn-Off Delay Time33 ns
Turn-On Delay Time21 ns
Dimensions
Height1.1 mm