공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-08-27
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
InfineonIRFS7530TRLPBF
MOSFET N CH 60V 195A D2PAK / Trans MOSFET N-CH Si 60V 295A 3-Pin(2+Tab) D2PAK T/R
Rochester ElectronicsIRFSL7530PBF
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
STMicroelectronicsSTH265N6F6-2AG
MOSFET N-CH 60V 180A H2PAK-2 / N-Channel 60 V 180A (Tc) 300W (Tc) Surface Mount H2Pak-2
STMicroelectronicsSTH265N6F6-6AG
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 onsemi FDMS86550에 대한 설명입니다.
N-Channel PowerTrench® MOSFET 60V, 234A, 1.65mΩ
Power Field-Effect Transistor, 32A I(D), 60V, 0.00165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
MOSFET, N-CH, 60V, 234A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 234A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.3V; Pow
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance andyet maintain superior switching performance.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight56.5 mg
Technical
Continuous Drain Current (ID)32 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance1.65 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance11.53 nF
Max Operating Temperature150 °C
Max Power Dissipation156 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max1.65 mΩ
Rise Time27 ns
Schedule B8541290080
Turn-Off Delay Time42 ns
Turn-On Delay Time43 ns
Dimensions
Height1.05 mm
Length5.1 mm
Width6.25 mm