MOSFET, N-CH, 30V, 423A, POWER 56-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 423A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 500µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V;
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on).