공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-10-19
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
InfineonBSC020N03LSGATMA1
Power MOSFET, N Channel, 30 V, 176 A, 2 MilliOhms, TDSON, 8 Pins, Surface Mount
InfineonBSC016N03MSGATMA1
MOSFET N-CH 30V 100A TDSON-8 / Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP T/R
설명
유통업체에서 제공한 onsemi FDMS8018에 대한 설명입니다.
Single N-Channel 30 V 2.5 W 61 nC PowerTrench Surface Mount Mosfet - POWER 56-8
N-Channel PowerTrench® MOSFET 30V, 175A, 1.8mΩ
Power Field-Effect Transistor, 30A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
2.5W(Ta)£¬83W(Tc) 20V 3V@ 250¦ÌA 61nC@ 10V 1individualNChannel 30V 1.8m¦¸@ 30A,10V 30A£¬120A 5.235nF@15V PQFN SMD mount 1.1mm(height)
MOSFET, N-CH, 30V, 175A, 83W, POWER 56; Transistor Polarity: N Channel; Continuous Drain Current Id: 175A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight68.1 mg
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance1.8 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.235 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation83 W
Rds On Max1.8 mΩ
Rise Time7.3 ns
Schedule B8541290080
Turn-Off Delay Time38 ns
Turn-On Delay Time15 ns
Dimensions
Height1.1 mm
Length5.1 mm
Width6.25 mm