onsemi FDMS7658AS

N-Channel 30 V 28 A 1.9 mO Surface Mount PowerTrench SyncFET Mosfet - Power 56
$ 0.576
EOL
제조업체 페이지데이터시트

가격 및 재고

모든 가격 할인 보기
DistributorSKUMinPkg
VericalFDMS7658AS44,463487
Rochester ElectronicsFDMS7658AS44,463
1d
Flip ElectronicsFDMS7658AS57,785
7d
AvnetFDMS7658AS01725
6d
FarnellFDMS7658AS01
13h

데이터시트 및 문서

onsemi FDMS7658AS에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet8 페이지4년 전
Datasheet0 페이지0년 전

Future Electronics

onsemi

element14 APAC

Fairchild Semiconductor

재고 내역

3개월간의 트렌드:
+0.00%
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공급망

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-09-16
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2023-03-30
LTD Date2023-09-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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설명

유통업체에서 제공한 onsemi FDMS7658AS에 대한 설명입니다.

N-Channel 30 V 28 A 1.9 mO Surface Mount PowerTrench SyncFET Mosfet - Power 56
Future Electronics
Power Field-Effect Transistor, 29A I(D), 30V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
IHS
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Farnell
The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
Fairchild Semiconductor

이미지

element14 APAC
element14 APAC
Rochester Electronics

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