공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-08-10
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
InfineonIRFH4201TRPBF
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
InfineonIRFHM8329TRPBF
Single N-Channel 30 V 6.1 mOhm 26 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
설명
유통업체에서 제공한 onsemi FDMS7650DC에 대한 설명입니다.
N-Channel PowerTrench® MOSFET, Dual CoolTM 56, 30V, 100A, 0.99mΩ
FDMS7650DC N-Channel MOSFET, 289 A, 30 V PowerTrench, 8-Pin Power 56 ON Semiconductor
Power Field-Effect Transistor, 47A I(D), 30V, 0.00099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
3.3W(Ta)£¬125W(Tc) 20V 2.7V@ 250¦ÌA 206nC@ 10V 1individualNChannel 30V 990¦Ì¦¸@ 36A,10V 47A£¬100A 14.765nF@15V SMD mount 5mm*5.75mm*1.05mm
MOSFET, N CH, 30V, 49A, D-COOL POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight90 mg
Technical
Continuous Drain Current (ID)47 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance990 µΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance14.765 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.3 W
Rds On Max990 µΩ
Rise Time28 ns
Schedule B8541290080
Threshold Voltage1.9 V
Turn-Off Delay Time81 ns
Turn-On Delay Time29 ns
Dimensions
Height950 µm
Length5 mm
Width6 mm