공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-11-20
Lifecycle StatusProduction (Last Updated: 5 years ago)
LTB Date2022-01-07
LTD Date2022-07-07
Manufacturer Lifecycle StatusLIFETIME (Last Updated: 3 days ago)
관련 부품
InfineonBSC030N03LSGATMA1
Power MOSFET, N Channel, 30 V, 100 A, 0.0025 ohm, PG-TDSON, Surface Mount
InfineonBSC025N03MSGATMA1
30V 100A 2.5m´Î@10V30A 83W 2V@250Ã×A N Channel PG-TDSON-8 MOSFETs ROHS
설명
유통업체에서 제공한 onsemi FDMS6681Z에 대한 설명입니다.
Trans MOSFET P-CH Si 30V 21.1A 8-Pin PQFN EP T/R / MOSFET P-CH 30V 21.1A POWER56
P-Channel PowerTrench® MOSFET -30V, -122A, 3.2mΩ
FDMS6681Z Series -30 V -122 A 3.2 mOhm P-Channel PowerTrench Mosfet - Power-56
2.5W(Ta),73W(Tc) 25V 3V@ 250¦ÌA 241nC@ 10 V 1P 30V 3.2m¦¸@ 22.1A,10V 21.1A,49A 10.38nF@15V PQFN-8,TO-220,TO-220-3,TO-220AB 1.1mm
The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight68.1 mg
Technical
Continuous Drain Current (ID)21.1 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance3.2 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time197 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance10.38 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation73 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max3.2 mΩ
Resistance3.2 MΩ
Rise Time38 ns
Schedule B8541290080
Threshold Voltage-1.7 V
Turn-Off Delay Time260 ns
Turn-On Delay Time15 ns
Dimensions
Height1.1 mm
Length5 mm
Width6 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책