공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-16
Lifecycle StatusProduction (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 days ago)
관련 부품
InfineonIRF7805ZTRPBF
MOSFET, Power;P-Ch;VDSS 30V;RDS(ON) 5.5Milliohms;ID 16A;SO-8;PD 2.5W;VGS +/-20V
설명
유통업체에서 제공한 onsemi FDMS6673BZ에 대한 설명입니다.
P-Channel PowerTrench® MOSFET -30V, -82A, 6.8mΩ
FDMS6673BZ Series -30 V -82 A 6.8 mOhm P-Channel PowerTrench Mosfet - Power56
Small Signal Field-Effect Transistor, 15.2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
MOSFET, P CH, 30V, 28A, POWER56; Transistor Polarity:P Channel; Continuous Drain Current Id:-28A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0052ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:73W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMS6673BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight68.1 mg
Technical
Continuous Drain Current (ID)15.2 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance6.8 mΩ
Drain to Source Voltage (Vds)-30 V
Element ConfigurationSingle
Fall Time79 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance5.915 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation73 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max6.8 mΩ
Rise Time28 ns
Schedule B8541290080
Threshold Voltage-1.8 V
Turn-Off Delay Time97 ns
Turn-On Delay Time14 ns
Dimensions
Height1.1 mm
Length5 mm
Width6 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
규정 준수 정책