onsemi FDME905PT

Transistor, P-channel, Powertrench Mosfet, -12V, -8A, 22 Mohm, Low Profile
$ 0.308
Production
제조업체 페이지데이터시트

가격 및 재고

모든 가격 할인 보기
DistributorSKUMinPkg
Avnet
2
FDME905PT3,060,0005K
9h
DigiKey
3
FDME905PTFSCT-ND18,9701Cut Tape
Flip ElectronicsFDME905PT1,020,000
3d
NewarkFDME905PT05KTape & Reel
Onlinecomponents.comFDME905PT01250Bulk

데이터시트 및 문서

onsemi FDME905PT에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet7 페이지3년 전
Datasheet0 페이지0년 전

onsemi

Farnell

Fairchild Semiconductor

재고 내역

3개월간의 트렌드:
-1.54%
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공급망

Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-11-17
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

관련 부품

Diodes Inc.DMP1022UFDE-7
Mosfet, P-Ch, 12V, 9.1A, U-Dfn2020 Rohs Compliant: Yes |Diodes Inc. DMP1022UFDE-7
세부 사항
onsemiFDMA905P
FDMA905P Series -12 V -10 A 16 mOhm Single P-Ch PowerTrench® MOSFET-MicroFET 2X2
세부 사항
VishaySIB488DK-T1-GE3
SiB488DK Series N-Channel 12 V 20 mOhm 13 W Power Mosfet -PowerPAK SC-75-6L
세부 사항
VishaySI3473CDV-T1-GE3
P-CH MOSFET TSOP-6 12V 36MOHM @ 41.8V- LEAD(PB) AND HALOGEN FREE
세부 사항
VishaySI3473CDV-T1-E3
Trans MOSFET P-CH 12V 8A 6-Pin TSOP T/R / MOSFET P-CH 12V 8A 6-TSOP
세부 사항
Diodes Inc.DMC1017UPD-13
Trans MOSFET N/P-CH 12V/-12V 9.5A/-6.5A 8-Pin PowerDI T/R
세부 사항

설명

유통업체에서 제공한 onsemi FDME905PT에 대한 설명입니다.

TRANSISTOR, P-CHANNEL, POWERTRENCH MOSFET, -12V, -8A, 22 MOHM, LOW PROFILE
RS (Formerly Allied Electronics)
P-Channel PowerTrench® MOSFET -12V, -8A, 22mΩ
onsemi
P-Ch. Er Trench Mosfet Rohs Compliant: Yes |Onsemi FDME905PT
Newark
Trans MOSFET P-CH 12V 8A 6-Pin MicroFET T/R
Verical
Small Signal Field-Effect Transistor, 8A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
onsemi PMOS PowerTrench, Vds=12 V, 8 A, MicroFET 2 x 2, , 6
UnikeyIC
MOSFET, P-CHANNEL, 12V, 8A, UFET;
Farnell
POWER FIELD-EFFECT TRANSISTOR, 8
ODG (Origin Data Global)
MOSFET, P CH, 12V, 8A, MFET1.6X1.6; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:µFET; No. of Pins:6; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
element14 APAC
This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance.The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
Fairchild Semiconductor

이미지

RS
LZChips
LCSC
element14 APAC
Rochester Electronics

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