공급망
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-02-24
Lifecycle StatusEOL (Last Updated: 6 days ago)
LTB Date2025-01-05
LTD Date2025-07-05
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
관련 부품
설명
유통업체에서 제공한 onsemi FDME510PZT에 대한 설명입니다.
P-Channel PowerTrench® MOSFET -20V, -6A, 37mΩ
Small Signal Field-Effect Transistor, 6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET P-CH 20V 6A 6-Pin MicroFET T/R
MOSFET, P CH, 20V, 6A, MFET1.6X1.6; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.031ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-500mV; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins6
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance37 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time54 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.49 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-500 mV
Number of Channels1
Number of Elements1
Power Dissipation700 mW
Rds On Max37 mΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage-500 mV
Turn-Off Delay Time93 ns
Turn-On Delay Time6.5 ns
Dimensions
Height550 µm
Length1.6 mm
Width1.6 mm