공급망
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-01-29
Lifecycle StatusObsolete (Last Updated: 6 days ago)
LTB Date2023-03-30
LTD Date2023-09-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)
관련 부품
InfineonIRF8707GTRPBF
N CH POWER MOSFET, HEXFET, 30V, 11A, SO-8; Transistor Polarity:N Channel; Contin
InfineonIRFHM8363TRPBF
30V Dual N-Channel HEXFET Power MOSFET in a PQFN 3.3mm x3.3mm Lead Free package
설명
유통업체에서 제공한 onsemi FDMC8878에 대한 설명입니다.
N-Channel 30 V 14 mOhm Surface Mount Power Trench Mosfet - Power 33
N-Channel Power Trench® MOSFET 30V, 16.5A, 14mΩ
This N–Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced Power Trench process. It has been optimized for power management applications.
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:9.6A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):9.6mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1.7V
MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:16.5A; Resistance, Rds On:0.014ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.7V; Case Style:Power 33; Termination Type:SMD; Current, Idm Pulse:60A; No. of Pins:8; Power Dissipation:2.1W; SMD Marking:FDMC8878; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Contact PlatingGold
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight180 mg
Technical
Continuous Drain Current (ID)9.6 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vds)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.23 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation31 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Channels1
Number of Elements1
Power Dissipation2.1 W
Rds On Max14 mΩ
Resistance14 MΩ
Rise Time4 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1.7 V
Turn-Off Delay Time20 ns
Turn-On Delay Time8 ns
Dimensions
Height800 µm
Length3 mm
Width3 mm