가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FDMC86570LET60 | 10,046 | 235 | |||||||||
| Rochester Electronics | FDMC86570LET60 | 10,046 | 20h | |||||||||
| DigiKey | FDMC86570LET60CT-ND | 1,706 | 1 | Cut Tape | ||||||||
| Newark | FDMC86570LET60 | 0 | 3K | Tape & Reel | ||||||||
| Onlinecomponents.com | FDMC86570LET60 | 0 | 750 | Bulk |
공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-01-26
Lifecycle StatusNRND (Last Updated: 1 week ago)
Manufacturer Lifecycle StatusACTIVE, NOT REC (Last Updated: 1 week ago)
관련 부품
InfineonIRFH5006TRPBF
INFINEON IRFH5006TRPBF MOSFET Transistor, N Channel, 21 A, 60 V, 0.0035 ohm, 10 V, 4 VNew
InfineonIRFH7085TRPBF
60V Single N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package, PG-TDSON-8, RoHS
설명
유통업체에서 제공한 onsemi FDMC86570LET60에 대한 설명입니다.
PT7 N-ch 60/20V Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, 3.3X3.3 MM
N-Channel Shielded Gate PowerTrench® MOSFET 60V, 87A, 4.3mΩ
Trans MOSFET N-CH 60V 18A 8-Pin Power QFN EP T/R
2.8W(Ta),65W(Tc) 20V 3V@ 250¦ÌA 88nC@ 10 V 1N 60V 4.3m¦¸@ 18A,10V 18A,87A 4.79nF@30V QFN 3.3mm*3.3mm*800¦Ìm
MOSFET N-CH 60V 18A/87A POWER33
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight152.7 mg
Technical
Continuous Drain Current (ID)87 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance4.3 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time3.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.79 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation65 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2.8 W
Rds On Max4.3 mΩ
Rise Time6.2 ns
Schedule B8541290080
Turn-Off Delay Time38 ns
Turn-On Delay Time19 ns
Dimensions
Height800 µm