공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-01-26
Lifecycle StatusNRND (Last Updated: 2 months ago)
LTB Date2027-01-10
LTD Date2027-07-10
Manufacturer Lifecycle StatusACTIVE, NOT REC (Last Updated: 2 months ago)
관련 부품
InfineonIRFH5006TRPBF
INFINEON IRFH5006TRPBF MOSFET Transistor, N Channel, 21 A, 60 V, 0.0035 ohm, 10 V, 4 VNew
InfineonIRFH7085TRPBF
60V Single N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package, PG-TDSON-8, RoHS
onsemiFDD86567-F085
N-Ch MOSFET 60V 100A RDS(ON) 3.2mΩ@80A,10V Qg 82nC@10V Ciss 4.95nF@30V TO-252AA SMD 2.52mm H
설명
유통업체에서 제공한 onsemi FDMC86570LET60에 대한 설명입니다.
PT7 N-ch 60/20V Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, 3.3X3.3 MM
N-Channel Shielded Gate PowerTrench® MOSFET 60V, 87A, 4.3mΩ
Power Field-Effect Transistor, 87A I(D), 60V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight152.7 mg
Technical
Continuous Drain Current (ID)87 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance4.3 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time3.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.79 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation65 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2.8 W
Rds On Max4.3 mΩ
Rise Time6.2 ns
Schedule B8541290080
Turn-Off Delay Time38 ns
Turn-On Delay Time19 ns
Dimensions
Height800 µm