가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | FDMC8588DC | 2,500 | 13h | |||||||||
| Flip Electronics | FDMC8588DC | 35,367 | 5d | |||||||||
| Avnet | FDMC8588DC | 0 | 575 | 15h | ||||||||
| Farnell | FDMC8588DC | 0 | 1 | 13h | ||||||||
| Microchip USA | FDMC8588DC | 350 | 150 | 6d |
공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-06-18
Lifecycle StatusObsolete (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
관련 부품
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VishaySIS454DN-T1-GE3
SIS454DN-T1-GE3 series 20 V 35 A 3.7 mOhm N-Channel PowerPAK 1212-8 Mosfet
설명
유통업체에서 제공한 onsemi FDMC8588DC에 대한 설명입니다.
FAIRCHILD SEMICONDUCTOR FDMC8588DC MOSFET Transistor, N Channel, 40 A, 25 V, 0.0036 ohm, 10 V, 1.2 V
Power Field-Effect Transistor, 17A I(D), 25V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) , fast switching speed and body diode reverse recovery performance.
MOSFET, N-CH, 25V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:41W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
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기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight32.13 mg
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance5 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time2 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.695 nF
Max Operating Temperature150 °C
Max Power Dissipation41 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1.2 V
Number of Elements1
Power Dissipation41 W
Rds On Max5 mΩ
Rise Time3 ns
Threshold Voltage1.2 V
Turn-Off Delay Time25 ns
Turn-On Delay Time8 ns