공급망
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-08-12
Lifecycle StatusEOL (Last Updated: 5 days ago)
LTB Date2024-04-06
LTD Date2024-10-06
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
관련 부품
InfineonIRF7811WTRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 9 Milliohms;ID 14A;SO-8;PD 3.1W;VGS +/-12V
InfineonBSC093N04LSGATMA1
Power MOSFET, N Channel, 40 V, 49 A, 9.3 mOhm, TDSON, 8 Pins, Surface Mount
설명
유통업체에서 제공한 onsemi FDMC8030에 대한 설명입니다.
Dual N-Channel Power Trench® MOSFET 40V, 12A, 10mΩ
Dual N-Channel 40 V 1.9 W 30 nC Silicon Surface Mount Mosfet - POWER 33-8
Transistor MOSFET Array Dual N-CH 40V 12A 8-Pin Power 33 T/R
Avnet Japan
onsemi N-Channel MOSFET PowerTrench, Vds=40V, 12A, Power33 Package, SMD, 8-Pin
MOSFET Array, Dual N Channel, 40 V, 12 A, 10 Milliohms, Power 33, 8 Pins
Trans MOSFET N-CH 40V 12A 8-Pin WDFN EP T/R / MOSFET 2N-CH 40V 12A 8MLP
This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance.
MOSFET, DUAL N-CH, 40V, 12A, POWER 33-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 40V; On Resistance Rds(on; Available until stocks are exhausted Alternative available
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals4
Weight196 mg
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationDual
Fall Time3 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.975 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.9 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingTape and Reel
Power Dissipation14 W
Rds On Max10 mΩ
Rise Time3 ns
Schedule B8541290080
Threshold Voltage1.5 V
Turn-Off Delay Time19 ns
Turn-On Delay Time7 ns
Dimensions
Height800 µm
Length3 mm
Width3 mm