공급망
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-12-02
Lifecycle StatusEOL (Last Updated: 2 days ago)
LTB Date2025-01-05
LTD Date2025-07-05
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
관련 부품
설명
유통업체에서 제공한 onsemi FDMC7692S에 대한 설명입니다.
MOSFET, N CH, 30V, 18A, MLP3.3X3.3; Transistor Polarity:N Channel; Continuous Dr
Transistor MOSFET N-CH 30V 12.5A 8-Pin WDFN T/R
N-Channel Power Trench® SyncFET™ 30V, 18A, 9.3mΩ
MOSFET 30V N-Channel PowerTrench SyncFET
Power Field-Effect Transistor, 12.5A I(D), 30V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 30V, 18A, 150DEG C, 2.3W;
2.3W(Ta),27W(Tc) 20V 3V@1mA 23nC@ 10V 1N 30V 9.3m¦¸@ 12.5A,10V 12.5A,18A 1.385nF@15V MLP-8 3.3mm*3.3mm*800¦Ìm
MOSFET N-CH 30V 12.5A/18A 8MLP
IC GATE DRVR HI/LOW SIDE 8SOIC
This FDMC7692S is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for power management and load switching applications common in notebook computers and portable battery packs.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight200 mg
Technical
Continuous Drain Current (ID)12.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance9.3 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.385 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.3 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2.3 W
Rds On Max9.3 mΩ
Rise Time3 ns
Turn-Off Delay Time19 ns
Turn-On Delay Time9 ns
Dimensions
Height800 µm
Length3.3 mm
Width3.3 mm