가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | FDMA908PZ | 9 | 5 | Cut Tape | 8h | |||||||
| element14 APAC | FDMA908PZ | 9 | 5 | Cut Tape | 15h | |||||||
| Microchip USA | FDMA908PZ | 216 | 600 | 4d | ||||||||
| Weyland Electronics Group Pte. Ltd. | FDMA908PZ | 56,666 | 1 | Tape & Reel | 3d | |||||||
| Win Source | WS-FDMA908PZ | 136,000 | 145 | 22h |
공급망
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-07-13
Lifecycle StatusEOL (Last Updated: 5 hours ago)
LTB Date2024-06-22
LTD Date2024-12-22
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 hours ago)
관련 부품
Diodes Inc.DMN1019UFDE-7
MOSFET N CH 12V 11A U-DFN2020-6E / Trans MOSFET N-CH 12V 11A 6-Pin DFN EP T/R
VishaySIA447DJ-T1-GE3
VISHAY - SIA447DJ-T1-GE3 - MOSFET Transistor, P Channel, 12 A, -12 V, 0.011 ohm, -4.5 V, -400 mV
Diodes Inc.DMP1022UFDE-7
Mosfet, P-Ch, 12V, 9.1A, U-Dfn2020 Rohs Compliant: Yes |Diodes Inc. DMP1022UFDE-7
VishaySIB488DK-T1-GE3
SiB488DK Series N-Channel 12 V 20 mOhm 13 W Power Mosfet -PowerPAK SC-75-6L
설명
유통업체에서 제공한 onsemi FDMA908PZ에 대한 설명입니다.
P-Channel PowerTrench® MOSFET -12V, -12A, 12.5mΩ
P-Channel 12 V 12.5 mO 24 nC PowerTrench Mosfet - MicroFET-6EPx2
MOSFET, P-CH, -12V, -12A, MICROFET-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Contact PlatingGold
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight30 mg
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance12.5 mΩ
Drain to Source Voltage (Vdss)-12 V
Element ConfigurationSingle
Fall Time71 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance3.957 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage12 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.4 W
Rds On Max12.5 mΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage-600 mV
Turn-Off Delay Time131 ns
Turn-On Delay Time11 ns
Dimensions
Height850 µm
Length2.05 mm
Width2.05 mm