MOSFET,PP CH,20V,3.6A,MIRCOFET2X2; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-500mV; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:-3.6A; Drain Source Voltage Vds:-20V; Module Configuration:Dual; On Resistance Rds(on):0.04ohm; Power Dissipation Pd:1.4W
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 Thin package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications.