공급망
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-08-24
Lifecycle StatusEOL (Last Updated: 1 week ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
설명
유통업체에서 제공한 onsemi FDMA1027P에 대한 설명입니다.
Transistor, mosfet, matched Pair, p-Channel,20V V(Br)Dss,2.2A I(D),llcc |Onsemi FDMA1027P
PowerTrench® MOSFET, Dual P-Channel, -20V, -3.0A, 120mΩ
Dual P-Channel 20 V 120 mO 4 nC SMT PowerTrench® Mosfet - MicroFET 2x2
Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC
DC DC Converters 1 (Unlimited) 1 4-SIP Module Through Hole Isolated Module ITE (Commercial) ECONOLINE RI3 (3W) -40°C~85°C 0.45Lx0.30W x 0.40 H 11.4mmx7.6mmx10.2mm CONV DC/DC 3W 05VIN 15VOUT THT S
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.The MicroFET 2x2 package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight40 mg
Technical
Continuous Drain Current (ID)2.2 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance120 mΩ
Drain to Source Voltage (Vds)-20 V
Element ConfigurationDual
Fall Time11 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance435 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.4 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation700 mW
Rds On Max120 mΩ
Rise Time11 ns
Turn-Off Delay Time15 ns
Turn-On Delay Time9 ns
Dimensions
Height850 µm
Length2 mm
Width2 mm