공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2001-10-11
Lifecycle StatusEOL (Last Updated: 6 days ago)
LTB Date2025-04-17
LTD Date2025-10-17
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
관련 부품
VishaySI1553CDL-T1-GE3
SI1553CDL-T1-GE3 Dual N/P-channel MOSFET Transistor, 0.4A, 0.7A, 20V, 6-Pin SOT-363
설명
유통업체에서 제공한 onsemi FDG6335N에 대한 설명입니다.
N-Channel PowerTrench® MOSFET, 20V, 0.7A, 300mΩ
Trans MOSFET N-CH 20V 0.7A 6-Pin SC-88 T/R / MOSFET 2N-CH 20V 0.7A SOT-363
20V N-CHANNEL POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL N-CH, 20V, 0.7A, SC-70-6; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 700mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on; Available until stocks are exhausted Alternative available
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)700 mA
Current Rating700 mA
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance300 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time7 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance113 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation300 mW
Rds On Max300 mΩ
Resistance300 MΩ
Rise Time7 ns
Schedule B8541210080
Threshold Voltage1.1 V
Turn-Off Delay Time9 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)20 V
Dimensions
Height1.1 mm
Length2 mm
Width1.25 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책