공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-10-11
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2018-09-30
LTD Date2019-03-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
관련 부품
VishaySI1965DH-T1-GE3
SI1965DH-T1-GE3 DUAL P-CHANNEL MOSFET TRANSISTOR, 1.2 A, 12 V, 6-PIN SOT-363
Diodes Inc.DMN2112SN-7
Single N-Channel 20 V 0.25 Ohm 500 mW Silicon Surface Mount Mosfet - SOT-23
설명
유통업체에서 제공한 onsemi FDG330P에 대한 설명입니다.
P-Channel 1.8V Specified PowerTrench® MOSFET -12 V, -2 A, 110 mΩ
12V/8V, 110/150/215MO, PCH, SINGLE, SC70-6, 160A GOX, PTII
Small Signal Field-Effect Transistor, 2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET P-CH 12V 2A 6-Pin SC-70 T/R
SMALL SIGNAL FIELD-EFFECT TRANSI
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-12V; Continuous Drain Current, Id:2A; On Resistance, Rds(on):0.14ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:6-SC-70 ;RoHS Compliant: Yes
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)2 A
Current Rating-2 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)-12 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance477 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation480 mW
Min Breakdown Voltage12 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation750 mW
Rds On Max110 mΩ
Rise Time11 ns
Schedule B8541210080
Threshold Voltage-700 mV
Turn-Off Delay Time12 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)-12 V
Dimensions
Height1.1 mm
Length2 mm
Width1.25 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책