공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-09-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-03-02
LTD Date2011-09-02
설명
유통업체에서 제공한 onsemi FDD8580에 대한 설명입니다.
MOSFET N-CH 20V 35A DPAK
Power Field-Effect Transistor, 35A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:35A; On Resistance, Rds(on):6.6mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
N CHANNEL MOSFET, 20V, 35A TO-252AA; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:20V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:49.5W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:35A; Package / Case:DPAK; Power Dissipation Pd:49.5W; Power Dissipation Pd:49.5W; Pulse Current Idm:159A; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1.2V
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기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)35 A
Current Rating25 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time34 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.445 nF
Max Operating Temperature175 °C
Max Power Dissipation49.5 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation49.5 W
Rds On Max9 mΩ
Rise Time11 ns
Turn-Off Delay Time59 ns
Voltage Rating (DC)20 V