공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-05-02
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2019-07-31
LTD Date2020-01-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
관련 부품
Diodes Inc.DMTH10H030LK3-13
MOSFET N-CH 100V 28A TO252 / N-Channel 100 V 28A (Tc) 2.1W (Ta) Surface Mount TO-252-3
Diodes Inc.DMC3021LK4-13
Mosfet, Dual, N/P-Ch, 30V, 14A Rohs Compliant: Yes |Diodes Inc. DMC3021LK4-13
onsemiNVDD5894NLT4G
Dual N−Channel Power MOSFET 40V, 64A, 10mΩ Power MOSFET 40 V, 10 mohm, 64 A, Dual N-Channel DPAK-5L
설명
유통업체에서 제공한 onsemi FDD850N10LD에 대한 설명입니다.
BoostPak (N-Channel PowerTrench® MOSFET + Diode) 100V, 15.3A, 75 mΩ
Trans MOSFET N-CH 100V 15.3A 5-Pin(4+Tab) TO-252 T/R
MOSFET 100V, 15.7A, 75mOhm N-Channel BoostPak
Power Field-Effect Transistor, 15.3A I(D), 100V, 0.096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AD
MOSFET N-CH 100V 15.3A TO252-4L
TAPE REEL/PT3 100V Logic BoostFET
15.3A, 100V, 0.096OHM, N-CHANNE
This N-Channel MOSFET is produced using Fairchild Semiconductor ®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252-5
MountSurface Mount
Number of Pins3
Number of Terminals4
Weight260.37 mg
Technical
Continuous Drain Current (ID)15.3 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance96 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.465 nF
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel
Rds On Max75 mΩ
Rise Time21 ns
Turn-Off Delay Time27 ns
Turn-On Delay Time17 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm