MOSFET P CH DUAL 25V 0.12A SSOT6; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -200mA; Drain Source Voltage Vds: -25V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs:
These Dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switchimg applications. Since bias resistors are not required this one P-Channel FET can replace several digital transistors with different bias resistors like the IMBxA series.