MOSFET, N CH, 100V, 2.6A, SSOT6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):125mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.6A; Package / Case:SSOT; Power Dissipation Pd:1.6W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:2.3V; Voltage Vgs Rds on Measurement:10V
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.