공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-05-10
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
InfineonIRFP4332PBF
MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 360 W
설명
유통업체에서 제공한 onsemi FDA69N25에 대한 설명입니다.
N-Channel Power MOSFET, UniFETTM, 250V, 69A, 41mΩ, TO-3P
Single N-Channel 250 V 0.041 Ohm 100 nC 480 W Silicon Through Hole Mosfet TO-3PN
MOSFET, N-CH, 250V, 69A, TO-3PN-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 69A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Continuous Drain Current (ID)69 A
Current Rating69 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance41 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time220 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance4.64 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation480 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation480 W
Rds On Max41 mΩ
Rise Time885 ns
Schedule B8541290080
Turn-Off Delay Time130 ns
Turn-On Delay Time95 ns
Voltage Rating (DC)250 V
Dimensions
Height23.8 mm
Length15.8 mm
Width5 mm