공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2013-11-13
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
STMicroelectronicsSTP18N60M2
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220 package
STMicroelectronicsSTF18N60M2
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220FP package
onsemiFCPF380N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, TO-220F
설명
유통업체에서 제공한 onsemi FCPF400N80Z에 대한 설명입니다.
N-Channel Power MOSFET, SUPERFET® II, 800 V, 14 A, 400 mΩ, TO-220F
Power MOSFET, N Channel, 800 V, 11 A, 0.4 ohm, TO-220F, Through Hole
Power Field-Effect Transistor, 11A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 800V, 11A, TO-220F; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Po
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailoredto minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently,SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance400 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.35 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation35.7 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation35.7 W
Rds On Max400 mΩ
Rise Time34 ns
Schedule B8541290080
Threshold Voltage4.5 V
Turn-Off Delay Time51 ns
Turn-On Delay Time20 ns
Dimensions
Height19.5 mm
Length10.36 mm
Width4.9 mm