공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-04-18
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
관련 부품
onsemiFCH041N60F-F085
MOSFET N-CH 600V 76A TO247-3 / N-Channel 600 V 76A (Tc) 595W (Tc) Through Hole TO-247-3
STMicroelectronicsSTW72N60DM2AG
N-Channel 600 V 42 mOhm Flange Mount MDmesh DM2 Power Mosfet - TO-247
VishaySIHG70N60EF-GE3
Mosfet N-Ch 600V 70A To-247 Ef Series Rohs Compliant: Yes |Vishay SIHG70N60EF-GE3
설명
유통업체에서 제공한 onsemi FCH043N60에 대한 설명입니다.
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 75 A, 43 mΩ, TO-247
Power Field-Effect Transistor, 75A I(D), 600V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance43 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance12.225 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation592 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation592 W
Rds On Max43 mΩ
Rise Time36 ns
Turn-Off Delay Time162 ns
Turn-On Delay Time46 ns
Dimensions
Height19.68 mm
Length15.87 mm
Width4.82 mm