가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FCD900N60Z | 37,112 | 2500 | 14h | ||||||||
| Rochester Electronics | FCD900N60Z | 1,358 | 12h | |||||||||
| Arrow Electronics | FCD900N60Z | 2,500 | 2500 | |||||||||
| Verical | FCD900N60Z | 1,213 | 312 | |||||||||
| DigiKey | FCD900N60ZCT-ND | 1,442 | 1 | Cut Tape |
공급망
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
설명
유통업체에서 제공한 onsemi FCD900N60Z에 대한 설명입니다.
N-Channel Power MOSFET, SuperFET® II, FAST, 600 V, 4.5 A, 900 mΩ, DPAK
FCD900N60Z Series 600 V 4.5 A N-Channel SuperFET® II Mosfet -TO-252, (D-Pak)
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)4.5 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance900 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time11.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance720 pF
Max Operating Temperature150 °C
Max Power Dissipation52 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2 W
Rds On Max900 mΩ
Rise Time5.2 ns
Turn-Off Delay Time33.6 ns
Turn-On Delay Time10.9 ns
Dimensions
Height6.22 mm
Length6.73 mm
Width2.39 mm