onsemi FCD4N60TM

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 3.9 A, 1.2 Ω, DPAK

N-Channel 600 V 3.9 A 1.2 Ohm Surface Mount SuperFET® Mosfet - TO-252-3

MOSFET, N, 600V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:3.9A; On State Resistance Max:1.2ohm; Package / Case:DPAK; Power Dissipation Pd:50W; Power Dissipation Pd:50W; Pulse Current Idm:11.7A; Termination Type:SMD; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.