공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-03-27
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
InfineonIPD80R2K8CEATMA1
MOSFET N-CH 800V 1.9A TO252-3 / N-Channel 800 V 1.9A (Tc) 42W (Tc) Surface Mount PG-TO252-3
InfineonIPD60R3K3C6ATMA1
MOSFET N-CH 600V 1.7A TO252-3 / Trans MOSFET N-CH 650V 1.7A Automotive 3-Pin(2+Tab) DPAK T/R
설명
유통업체에서 제공한 onsemi FCD3400N80Z에 대한 설명입니다.
N-Channel Power MOSFET, SUPERFET® II, 800 V, 2 A, 3.4 Ω, DPAK
Power Field-Effect Transistor, 2A I(D), 800V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
32W(Tc) 20V 4.5V@ 200µA 9.6nC@ 10 V 1individualNChannel 800V 3.4Ω@ 1A,10V 2A 400pF@100V TO-252AA SMD mount 6.73mm*6.22mm*2.39mm
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)2 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance3.4 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance400 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation32 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape (CT)
Power Dissipation32 W
Rds On Max3.4 Ω
Schedule B8541290080
Turn-Off Delay Time22.7 ns
Turn-On Delay Time10 ns
Dimensions
Height2.517 mm