onsemi FCB36N60NTM

N-Channel Power MOSFET, SUPREMOS®, FAST, 600V, 25A, 125mΩ, D2PAK
Obsolete

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데이터시트 및 문서

onsemi FCB36N60NTM에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

Upverter

Technical Drawing1 페이지5년 전

Farnell

ODG (Origin Data Global)

onsemi

element14 APAC

공급망

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-10-22
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2022-09-29
LTD Date2023-03-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

관련 부품

MOSFET, N CH, 600V, 29A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
STMicroelectronicsSTB45N65M5
N-channel 650 V, 0.067 Ohm typ., 35 A MDmesh M5 Power MOSFET in D2PAK package
STMicroelectronicsSTB42N65M5
N-channel 650 V, 0.070 Ohm typ., 33 A MDmesh M5 Power MOSFET in D2PAK package
STMicroelectronicsSTB36NM60ND
MOSFET N-CH 600V 29A D2PAK / N-Channel 600 V 29A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

설명

유통업체에서 제공한 onsemi FCB36N60NTM에 대한 설명입니다.

N-Channel Power MOSFET, SUPREMOS®, FAST, 600V, 25A, 125mΩ, D2PAK
MOSFET N-CH 600V 36A D2PAK / Trans MOSFET N-CH 600V 36A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 36A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

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  • onsemi / Fairchild
  • MOT/ON SEMI
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부품 번호 별칭

이 부품은 다음과 같은 대체 부품 번호로 알려져 있을 수 있습니다.

  • FCB36N60NTM.