공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-03-27
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
STMicroelectronicsSTB23N80K5
N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in D2PAK package
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N-channel 650 V, 0.185 Ohm typ., 16 A MDmesh M2 Power MOSFET in D2PAK package
InfineonIPB65R280C6
MOSFET N-CH 650V 13.8A D2PAK N-Channel 650 V 13.8A (Tc) 104W (Tc) Surface Mount PG-TO263-3
InfineonIPB90R340C3ATMA1
MOSFET N-CH 900V 15A D2PAK N-Channel 900 V 15A (Tc) 208W (Tc) Surface Mount PG-TO263-3
STMicroelectronicsSTB18NM60ND
N-Channel 600 V 0.29 Ohm 130 W Surface Mount Power Mosfet - D2PAK-3
설명
유통업체에서 제공한 onsemi FCB290N80에 대한 설명입니다.
N-Channel Power MOSFET, SUPERFET® II, 800 V, 17 A, 290 mΩ, D2PAK
212W(Tc) 20V 4.5V@1.7mA 75nC@ 10 V 1individualNChannel 800V 290mΩ@ 8.5A,10V 17A 3.205nF@100V D2PAK SMD mount 5.08mm(height)
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance290 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.205 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation212 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation212 W
Rds On Max290 mΩ
Schedule B8541290080
Turn-Off Delay Time61 ns
Turn-On Delay Time22 ns
Dimensions
Height5.08 mm