onsemi FCB11N60TM

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, D2PAK

MOSFET N-CH 600V 11A D2PAK / Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R

onsemi N-Ch MOSFET SuperFET Vds=600V 11A D2PAK (TO-263) SMD 3-Pin

Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263

MOSFET, N CH, 600V, 11A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012); Pulse Current Idm:33A

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.