공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-03-07
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2022-09-29
LTD Date2023-03-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
관련 부품
STMicroelectronicsSTW43NM60ND
N-channel 600 V, 0.075 Ohm, 35 A, TO-247 FDmesh(TM) Power MOSFET (with fast diode)
STMicroelectronicsSTP45N65M5
N-channel 650 V, 0.067 Ohm, 35 A MDmesh M5 Power MOSFET in TO-220 package
STMicroelectronicsSTW48N60DM2
N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package
설명
유통업체에서 제공한 onsemi FCA36N60NF에 대한 설명입니다.
Power MOSFET, N-Channel, SUPREMOS®, FRFET®, 600 V, 34.9 A, 95 mΩ, TO-3P
N-CHANNEL SUPREMOS FRFET MOSFET Power Field-Effect Transistor, 34.9A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N CH, 600V, 34.9A, TO3PN; Transistor Polarity:N Channel; Continuous Drain Current Id:34.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.7V; Power Dissipation Pd:312W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Continuous Drain Current (ID)34.9 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance95 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance4.245 nF
Max Operating Temperature150 °C
Max Power Dissipation312 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs3.7 V
Number of Elements1
Power Dissipation312 W
Rds On Max95 mΩ
Rise Time17 ns
Schedule B8541290080
Threshold Voltage3.7 V
Turn-Off Delay Time92 ns
Turn-On Delay Time27 ns
Dimensions
Height20.1 mm
Length16.2 mm
Width5 mm