onsemi DTC123JET1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

NPN Bipolar Digital Transistor (BRT)

DTC123JET1G NPN DIGITAL TRANSISTOR,100MA 50V 2.2 KOHM, RATIO OF 0.047,3-PIN SC-75

DTC Series 50 V 100 mA 47 kOhm NPN Silicon Bias Resistor Transistor - SC-75

80@5mA,10V 1 NPN - Pre Biased 200mW 100mA 50V 500nA SOT-523(SC-75) Digital Transistors ROHS

ON SEMICONDUCTOR - DTC123JET1G - BRT TRANSISTOR, 50V, 47K/2.2KOHM, SC75, FULL REEL

Trans Digital BJT NPN 50V 100mA 300mW 3-Pin SOT-416 T/R

TRANS, NPN, 2.2K/47K, SC-75-3; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:47kohm; Resis

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-75/SOT-416 package which is designed for low power surface mount applications.