The CNY17XM, CNY17FXM and MOC810XM devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.
OPTOCOUPLER, TRANSISTOR O/P; No. of Channels:1; Isolation Voltage:7.5kV; Optocoupler Output Type:Phototransistor; Input Current:60mA; Output Voltage:70V; Opto Case Style:DIP; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Approval Bodies:UL, VDE; Breakover Voltage Min:70V; Current If CTR:10mA; Current Transfer Ratio Min:40%; Fall Time tf:11µs; Operating Temperature Range:-40°C to +100°C; Output Type:Phototransistor; Rise Time:2µs