onsemi BSS138W

N-Channel MOSFET, Logic Level Enhancement Mode, 50V , 210mA, 3.5Ω

TRANSISTOR, MOSFET, N-CHANNEL, 50V, 210MA, LOGIC LEVEL, FAST SWITCHING, SOT323

N-Channel 50 V 3.5 Ohm SMT Enhancement Mode Field Effect Transistor - SOT-323

MOSFET N-CH 50V 0.21A SOT323 / Trans MOSFET N-CH 50V 0.21A 3-Pin SC-70 T/R

Power MOSFET, N Channel, 50 V, 210 mA, 3.5 ohm, SOT-323, Surface Mount

N CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 0.21A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

MOSFET, N CH, 50V, 0.21A, SOT-323-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 210mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.17ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.3V; Power Dissipation Pd: 340mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

This N-Channel enhancement mode field effect transistor. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.The BSS138W is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 210 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 6 / Gate-Source Voltage V = 20 / Fall Time ns = 14 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-323 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 340