공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.75
Introduction Date1991-03-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date1998-10-03
LTD Date2012-08-23
설명
유통업체에서 제공한 onsemi BF244B에 대한 설명입니다.
RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-92
This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50.
TRANSISTOR, JFET, N, TO-92; Transistor Type:JFET; Breakdown Voltage Vbr:30V; Zero Gate Voltage Drain Current Idss:6mA to 15mA; Gate-Source Cutoff Voltage Vgs(off) Max:8V; Power Dissipation Pd:350mW; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Application Code:HFA; Current Idss Max:15mA; Current Idss Min:6mA; Current Ig:10mA; Device Marking:BF244B; Drain Source Voltage Vds:30V; Forward Transconductance Gfs Max:6.5mA/V; Full Power Rating Temperature:25°C; Gfs Min:3mA/V; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:k; Pin Format:k; Power Dissipation Ptot Max:350mW; Termination Type:Through Hole; Transistor Polarity:N Channel
RF JFET; Transistor Polarity:N Channel; Power Dissipation, Pd:350mW; Package/Case:TO-92; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Breakdown Voltage, V(br)gss:30V; Current Rating:10mA ;RoHS Compliant: Yes
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight201 mg
Technical
Breakdown Voltage30 V
Continuous Drain Current (ID)50 mA
Current Rating10 mA
Drain to Source Voltage (Vdss)15 V
Element ConfigurationSingle
Frequency100 MHz
Gate to Source Voltage (Vgs)30 V
Input Capacitance3 pF
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Noise Figure1.5 dB
Number of Elements1
PackagingBulk
Power Dissipation350 mW
TerminationThrough Hole
Test Voltage15 V
Voltage Rating30 V
Voltage Rating (DC)30 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm