가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | BD17516STU | 0 | 1920 | |||||||||
| Farnell | BD17516STU | 0 | 1920 | Tube | 38m | |||||||
| Component Stockers USA | BD17516STU | 7,682 | >1wk | |||||||||
| Worldway Electronics | BD17516STU | 26,039 | 7 | Tube | 1d | |||||||
| Fmall Co., Limited | BD17516STU | 41,210 | 5d |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-12-20
Lifecycle StatusEOL (Last Updated: 6 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
설명
유통업체에서 제공한 onsemi BD17516STU에 대한 설명입니다.
Transistor, bjt, npn,45V V(Br)Ceo,3A I(C),to-126 Rohs Compliant: Yes |Onsemi BD17516STU
1.5 A, 80 V PNP Bipolar Power Transistor. ONSSPCTRNSTLT1T0R;
Power Bipolar Transistor, 3A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
45V 30W 3A 100@150mA2V 3MHz 800mV@1A100mA NPN +150¡Í@(Tj) TO-126 Bipolar Transistors - BJT ROHS
Bipolar Transistors - BJT NPN Epitaxial Sil
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-126-3
Contact PlatingTin
MountThrough Hole
Number of Terminals3
Weight761 mg
Technical
Collector Base Voltage (VCBO)45 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage800 mV
Collector Emitter Voltage (VCEO)45 V
Current Rating3 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency3 MHz
Gain Bandwidth Product3 MHz
hFE Min100
Max Breakdown Voltage45 V
Max Collector Current3 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation30 W
Transition Frequency3 MHz
Voltage Rating (DC)45 V
Dimensions
Height14.2 mm