onsemi BC856BDW1T1G

Bipolar Transistors (BJT); BC856BDW1T1G; ON SEMICONDUCTOR; PNP; 6; 65 V; 100 mA

ON SEMI BC856BDW1T1G DUAL PNP BIPOLAR TRANSISTOR, 0.1 A, 65 V, 6-PIN SC-88

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon

Trans GP BJT PNP 65V 0.2A 380mW 6-Pin SC-88 T/R / TRANS 2PNP 65V 0.1A SOT363

Bipolar Transistors - BJT 100mA 80V Dual PNP

These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications.

TRANSISTOR, PNP, -65V, -100MA, SOT-363-6; Transistor Polarity: Dual PNP; Collector Emitter Voltage V(br)ceo: -65V; Power Dissipation Pd: 380mW; DC Collector Current: -100mA; DC Current Gain hFE: 220hFE; Transistor Case Style:

TRANSISTOR, PNP, DUAL, -65V SOT-363, FULL REEL; Transistor Polarity:Dual PNP; Collector Emitter Voltage Max NPN:-; Collector Emitter Voltage Max PNP:-65V; Continuous Collector Current NPN:-; Continuous Collector Current PNP:100mA RoHS Compliant: Yes

Transistor Polarity = PNP / Configuration = Dual / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 65 / DC Current Gain (hFE) = 150 / Collector-Base Voltage (Vcbo) V = 80 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 380 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 650 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900 / Reflow Temperature Max. °C = 260