공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-04-01
Lifecycle StatusProduction (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 1 day ago)
관련 부품
onsemiBC848BWT1G
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
onsemiBC847CWT1G
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
NXP SemiconductorsBC846AT,115
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon
NXP SemiconductorsBC847AT,115
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 MHz, 150 mW, 100 mA, 110
NXP SemiconductorsPDTC144WE,115
Trans Digital BJT NPN 50V 100mA 150mW Automotive 3-Pin SC-75 T/R
설명
유통업체에서 제공한 onsemi BC848CWT1G에 대한 설명입니다.
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
BC848 Series 30 V 100 mA SMT NPN General Purpose Transistor - SC-70-3
ON SEMI BC848CWT1G NPN BIPOLAR TRANSISTOR, 0.1 A, 30 V, 3-PIN SC-70
30V 150mW 100mA NPN SC-70-3 Bipolar Transistors - BJT ROHS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
onsemi NPNTransistor, SOT-323 (SC-70)encapsulation, SMD mount, Maximum DC collector current100 mA, maximum collector-emission voltage30 V
NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 which is designed for low power surface mount applications.
TRANSISTOR, BIPOL, NPN, 30V, SOT-323-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:100MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:420hFE;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSC
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)30 V
Current Rating100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min420
Max Breakdown Voltage45 V
Max Collector Current100 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation150 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)30 V
Dimensions
Height900 µm
Length2.2 mm
Width1.35 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
규정 준수 정책