공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1976-07-06
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
설명
유통업체에서 제공한 onsemi BC516에 대한 설명입니다.
Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
PNP Darlington Transistor, TH, 625mW 10V 100nA 40V 30V 1A TO-92-3 5.2mm × 4.19mm × 5.33mm
Trans Darlington PNP 30V 1A 3-Pin TO-92 Bulk
PNP Darlington Transistor Product Highlights: This device is designed for applications reguiring extremely high current gain at currents to 1mA. Sourced from process 61.
Small Signal Bipolar Transistor; Transistor Polarity:PNP; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):30000; Package/Case:TO-92; C-E Breakdown Voltage:30V; DC Collector Current:1A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
DARLINGTON TRANSISTOR, TO-92; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:200MHz; Power Dissipation Pd:625mW; DC Collector Current:1A; DC Current Gain hFE:30000; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Av Current Ic:400mA; Collector Emitter Voltage Vces:1V; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:20mA; Device Marking:BC516; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:200MHz; Hfe Min:30000; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:f; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:600mW; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:40V
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
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- ON SEM
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- ONSEMIC
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- SCG
- ON Semiconductor Cor
- ON SEMICO
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- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
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- ON Semi - ON Semiconductor
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- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight200.005886 mg
Technical
Collector Base Voltage (VCBO)40 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)30 V
Continuous Collector Current1 A
Current4 A
Current Rating-1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)10 V
hFE Min30000
Max Collector Current400 mA
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityPNP
Power Dissipation625 mW
Transition Frequency200 MHz
Voltage30 V
Voltage Rating (DC)-30 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm