공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2020-01-28
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
설명
유통업체에서 제공한 onsemi AFGY100T65SPD에 대한 설명입니다.
IGBT - 650 V 100 A FS3 for EV traction inverter application IGBT - 650 V 100 A FS3
Trans IGBT Chip N-CH 650V 120A 660000mW Automotive 3-Pin(3+Tab) TO-247 Tube
Igbt, 650V, 100A, 175Deg C, 660W Rohs Compliant: Yes |Onsemi AFGY100T65SPD
IGBT - 650 V 100 A FS3 FOR EV TR / IGBT Trench Field Stop 650 V 120 A 660 W Through Hole TO-247-3
Insulated Gate Bipolar Transistor, 120A I(C), 650V V(BR)CES, N-Channel, TO-247
晶体管, IGBT, 650V, 100A, 175度 C, 660W;
ON Semiconductor AFGY100T65SPD
RS APAC
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-247-3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage2.05 V
Collector Emitter Voltage (VCEO)650 V
Continuous Collector Current120 A
Max Collector Current120 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation882 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation660 W
Turn-Off Delay Time78 ns
Turn-On Delay Time36 ns
Dimensions
Height24.85 mm