공급망
Country of OriginJapan
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-05-27
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2012-01-17
LTD Date2012-01-17
설명
유통업체에서 제공한 onsemi 2SJ651에 대한 설명입니다.
P-CHANNEL SINGLE WITH BUILT-IN DIODE 3 TO-220AB Mosfet Transistor 20A 60V 0.092Ohm 175mJ
Power MOSFET, P Channel, 60 V, 20 A, 0.06 ohm, TO-220ML, Through Hole
Power Field-Effect Transistor, 20A I(D), 60V, 0.092ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, P CH 60V 20A TO220; Transistor Polarity:P Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:2.6V; Power Dissipation Pd:2W; Transistor Case Style:TO-220ML; No. of Pins:3; Current Id Max:-20A; Package / Case:TO-220ML; Power Dissipation Pd:2W; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance92 mΩ
Drain to Source Voltage (Vdss)-60 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.2 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage60 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation2 W
Rds On Max60 mΩ
Turn-Off Delay Time190 ns
Turn-On Delay Time18 ns
Dimensions
Height21.6 mm