가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | 2SD1207T-AE | 4,693 | 1611 | |||||||||
| Rochester Electronics | 2SD1207T-AE | 5,155 | 10h | |||||||||
| RS (Formerly Allied Electronics) | 2SD1207T-AE | 0 | 1 | Bulk | 2h | |||||||
| Win Source | WS-2SD1207T-AE | 1,570 | 175 | 11h | ||||||||
| Worldway Electronics | 2SD1207T-AE | 27,796 | 7 | Tape & Reel | 10h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-06-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2017-04-18
LTD Date2017-10-18
관련 부품
onsemiFJNS3201RTA
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92S
설명
유통업체에서 제공한 onsemi 2SD1207T-AE에 대한 설명입니다.
Bipolar Transistor, 50V, 2A, Low VCE(sat) NPN Single MP hFE = 200-400
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Tape & Reel (TR) Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 100mA 2V 100nA ICBO 1W 150MHz
ON SEMI 2SD1207T-AE NPN BIPOLAR TRANSISTOR, 2 A, 50 V, 3-PIN MP
TRANSISTOR, NPN, 50V, 2A, TO-226; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Typ Gain Bandwidth ft:150MHz; Power Dissipation Pd:1W; DC Collector Current:2A; DC Current Gain hFE:400; Transistor Case Style:TO-226;;RoHS Compliant: Yes
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-226-3
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage150 mV
Collector Emitter Voltage (VCEO)50 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Gain Bandwidth Product150 MHz
hFE Min200
Max Breakdown Voltage50 V
Max Collector Current2 A
Max Frequency150 MHz
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
PolarityNPN
Transition Frequency150 MHz
Dimensions
Height8.5 mm
Length6 mm
Width4.7 mm